NVMFWS004N10MC

DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel 100 V, 3.9 mW, 138 A NVMFWS004N10MC V(BR)DSS 100 V RDS(ON) MAX 3.9 mW @ 10 V ID MAX 138 A D (5,6) Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 25°C ID Current RqJC (Note 1) Steady TC = 100°C Power Dissipation RqJC (Note 1) State TC = 25°C PD TC = 100°C 138 A 98 164 W 82 Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 21 A 15 3.8 W 1.9 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +175 Source Current (Body Diode) IS Single Pulse Drain−to−Source Avalanche EAS Energy (IL(pk) = 9.2 A) Lead Temperature Soldering Reflow for Solder- TL ing Purposes (1/8″ from case for 10 s) 126 A 536 mJ 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ...