2N7002KW

2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features Low On−Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra−Small Surface Mount Package These Devices are Pb−Free and are RoHS Compliant ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V as per JESD22 C101 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Gate−Source Voltage Maximum Drain Current Continuous TJ = 100°C Pulsed VDSS VGSS ID 60 V ±20 V 310 mA 195 mA 1.2 A Operating Junction Temperature Range TJ −55 to °C +150 Storage Temperature Range TSTG −55 to °C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Parameter Symbol Value Unit Total Device Dissipation Derating above TA = 25°C Thermal Resistance, Junction to Ambient* PD RqJA 300 mW 2.4 mW/°C 410 °C/W *Device mounted on FR−4 PCB, 1″ x 0.85″ x 0.062″. Minimum land pad size www.onsemi.com D S G SC−70 3 LEAD CASE 419AB MARKING DIAGRAM 7KW 7KW = Specific Device Marking D G S ORDERING INFORMATION† Device Package Shipping† 2N7002KW SC−70 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Re...