FQPF47P06YDTU

MOSFET – P-Channel, QFET) -60 V, -30 A, 26 mW FQPF47P06, FQPF47P06YDTU Description This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features −30 A, −60 V, RDS(on) = 26 mW (Max.) @ VGS = −10 V, ID = −15 A Low Gate Charge (Typ. 84 nC) Low Crss (Typ. 320 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating DATA SHEET www.onsemi.com VDSS −60 V RDS(ON) MAX 26 mW @ −10 V S ID MAX −30 A G D P−Channel MOSFET GDS TO−220F TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT G DS TO−220−3LD LF CASE 340BJ MARKING DIAGRAM © Semiconductor Components Industries, LLC, 2001 February, 2022 − Rev. 3 $Y&Z&3&K FQPF 47P06 $Y = onsemi Logo &Z = Assembly Plant Code &3 = 3−Digit Plant Code &K = 2−Digits Lot Run Traceability Code FQPF47P06 = Specific Device Code ORDERING INFORMATION Device Package Shipping FQPF47P06 TO−220−3 1000 Units / Tube (Pb−Free) FQPF47P06YDTU TO−220−3 800 Units / Tube (Pb−Free) 1 Publication Order Number: FQPF47P06/D FQPF47P06, FQPF47P06YDTU ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) Symbol Parameter FQPF47P06 / FQPF47P06YDTU...