BUL45G

BUL45G NPN Silicon Power Transistor High Voltage Switch-mode Series Designed for use in electronic ballast (light ballast) and in switch-mode power supplies up to 50 W. Features  Improved Efficiency Due to:  Low Base Drive Requirements (High and Flat DC Current Gain hFE)  Low Power Losses (On--State and Switching Operations)  Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 ms (typ)  @ IC = 2.0 A, IB1 = IB2 = 0.4 A  Full Characterization at 125C  Tight Parametric Distributions Consistent Lot--to--Lot  These Devices are Pb--Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector--Emitter Sustaining Voltage Collector--Base Breakdown Voltage Emitter--Base Voltage Collector Current -- Continuous -- Peak (Note 1) Base Current Total Device Dissipation @ TC = 25_C Derate above 25C Symbol VCEO VCES VEBO IC ICM IB PD Value 400 700 9.0 5.0 10 2.0 75 0.6 Unit Vdc Vdc Vdc Adc Adc W W/_C Operating and Storage Temperature THERMAL CHARACTERISTICS TJ, Tstg --65 to 150 _C Characteristics Symbol Max Unit Thermal Resistance, Junction--to--Case RθJC 1.65 _C/W Thermal Resistance, Junction--to--Ambient RθJA 62.5 _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle  10%. http://onsemi....