isc N-Channel MOSFET Transistor
IPD15N06S2L64
FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage
: VDSS= ...
isc N-Channel MOSFET
Transistor
IPD15N06S2L64
FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage
: VDSS= 55V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 64mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
55
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
19
A
IDM
Drain Current-Single Pluse
76
A
PD
Total Dissipation @TC=25℃
47
W
TJ
Max. Operating Junction Temperature -55~175
℃
Tstg
Storage Temperature
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 3.2
UNIT ℃/W
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isc N-Channel MOSFET
Transistor
IPD15N06S2L64
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
CONDITIONS VGS= 0; ID= 1.0mA
VDS= 10V; ID= 14uA VGS= 10V; ID= 13A VGS= 4V; ID= 13A VGS= ±20V;VDS= 0
VDS= 55V; VGS= 0
IS= 15A; VGS= 0
MIN MAX UNIT
55
--
V
1.2
2.0
V
--
64 85
mΩ
--
±0.1
uA
--
1.0
uA
--
1.3
V
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