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IPD15N06S2L64

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N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor IPD15N06S2L64 FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= ...


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IPD15N06S2L64

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Description
isc N-Channel MOSFET Transistor IPD15N06S2L64 FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 64mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 19 A IDM Drain Current-Single Pluse 76 A PD Total Dissipation @TC=25℃ 47 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 3.2 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPD15N06S2L64 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 1.0mA VDS= 10V; ID= 14uA VGS= 10V; ID= 13A VGS= 4V; ID= 13A VGS= ±20V;VDS= 0 VDS= 55V; VGS= 0 IS= 15A; VGS= 0 MIN MAX UNIT 55 -- V 1.2 2.0 V -- 64 85 mΩ -- ±0.1 uA -- 1.0 uA -- 1.3 V NOTICE: ISC reserves the rights to ma...




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