ISCI365W

isc Thyristors ISCI365W DESCRIPTION ·With TO-247 packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Line rectifying 50/60 Hz ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RMS) ITSM PG(AV) Tj Tstg Repetitive peak off-state voltage Repetitive peak reverse voltage RMS on-state current Surge non-repetitive on-state current ( 1/2 cycle,sine wave ) Average gate power dissipation Operating junction temperature Storage temperature MIN 1600 1600 55 520 1.0 -40~125 -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 80A IGT Gate-trigger current VD = 12V VGT Gate-trigger voltage VD = 12V Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 1 15 mA 1.6 V 10 50 mA 1.5 V 0.6 ℃/W Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment whic...