ISCN372M

isc Silicon NPN Power Transistor ISCN372M DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1500V; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE-1 DC current gain IC= 1A ; VCE= 5V ISCN372M MIN MAX UNIT 700 V 5.0 V 1.5 V 10 μA 1.0 mA 1.0 mA 20 40 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contai...