ISCNH371D

isc N-Channel MOSFET Transistor ISCNH371D FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.0 A IDM Drain Current-Single Pluse 8.0 A PD Total Dissipation @TC=25℃ 70 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.79 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 1mA VDS= 10V; ID= 0.25mA VGS= 10V; ID= 1.25A VGS= ±30V;VDS= 0 VDS= 900V; VGS= 0 IS= 1.25A; VGS= 0 ISCNH371D MIN MAX UNIT 900 -- V 3.0 4.0 V -- 6.0 Ω -- ±0.1 uA -- 1.0 uA -- 1.4 V NOTICE： ISC reserves the rights to make changes of th...