Power MOSFET
X3-Class HiPERFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXFY26N30X3 IXFA26N30X3 IXFP26N30X3
D
G
S
...
Description
X3-Class HiPERFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXFY26N30X3 IXFA26N30X3 IXFP26N30X3
D
G
S
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings
300
V
300
V
20
V
30
V
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
26 40 13 250 50 170 -55 ... +150 150 -55 ... +150
A A
A mJ V/ns
W C C C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263) Mounting Torque (TO-220)
10..65 / 2.2..14.6 1.13 / 10
N/lb Nm/lb.in
TO-252 TO-263 TO-220
0.35
g
2.50
g
3.00
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 500μA
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
300
V
2.5
4.5 V
100 nA
5 A 250 A
53
66 m
VDSS =
ID25 = RDS(on)
300V 26A 66m
TO-252 (IXFY)
TO-263 (IXFA)
TO-220 (IXFP)
G S D (Tab)
G S D (Tab)
G DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance
Advantages
High Power Density Easy to Mount Space Savings
Applications
Switch-Mode and Resonant...
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