NVD5117PL

isc P-Channel MOSFET Transistor NVD5117PL FEATURES ·Drain Current : ID= -61A@ TC=25℃ ·Drain Source Voltage : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -61 A PD Total Dissipation @TC=25℃ 118 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.3 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= -0.25mA VDS= -10V; ID= -0.25mA VGS= -10V; ID= -29A VGS= -4.5V; ID= -29A VGS= ±20V;VDS= 0 VDS= -60V; VGS= 0 IS= -29A; VGS= 0 NVD5117PL MIN MAX UNIT -60 -- V -1.5 -2.5 V -- 16 22 mΩ -- ±0.1 uA -- -1.0 uA -- -1.0 V NOTICE： ISC reserves the rights to make changes of the conten...