STF5NK100Z

isc N-Channel MOSFET Transistor STF5NK100Z FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 3.5 A IDM Drain Current-Single Pluse 14 A PD Total Dissipation @TC=25℃ 30 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 4.17 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 1mA VDS= 10V; ID= 0.1mA VGS= 10V; ID= 1.75A VGS= ±20V;VDS= 0 VDS= 1000V; VGS= 0 IS= 3.5A; VGS= 0 STF5NK100Z MIN MAX UNIT 1000 -- V 3 4.5 V -- 3.7 Ω -- ±10 uA -- 1 uA -- 1.6 V NOTICE： ISC reserves the rights to make change...