2SCR572D3

2SCR572D3 NPN 5.0A 30V Power Transistor Parameter Value VCEO 30V IC 5A lOutline 　 　 　 DPAK 　 　 　 TO-252 　 lFeatures 1) Suitable for Power Driver. 2) Complementary PNP Types : 2SAR572D3. 3) Low VCE(sat) 　　VCE(sat)=400mV(Max.). 　　(IC/IB=2A/100mA) lInner circuit Datasheet lApplication LOW FREQUENCY AMPLIFIER lPackaging specifications Part No. Package 2SCR572D3 TO-252 Taping code TL TL1 Reel size Tape width (mm) (mm) Basic ordering unit.(pcs) Marking 330 16 2500 2SCR572D3 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 1/7 20170830 - Rev.002 2SCR572D3 　 　 　 　　 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature 　 　 　 　 　 　 　 　 Datasheet Symbol Values Unit VCBO 30 V VCEO 30 V VEBO 6 V IC 5 A ICP*1 10 A PD*2 10 W Tj 150 ℃ Tstg -55 to +150 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = 100μA 30 - - V Collector-emitter breakdown voltage BVCEO IC = 1mA 30 - - V Emitter-base breakdown voltage BVEBO IE = 100μA 6 - - V Collector cut-off current ICBO VCB = 30V - - 1 μA Emitter cut-off current IEBO VEB = 4V - - 1 μA Collector-emitter saturation voltage...