isc N-Channel MOSFET Transistor
2SK429L
FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(...
isc N-Channel MOSFET
Transistor
2SK429L
FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.7Ω(Max) @ VGS= 15V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
3.0
A
IDM
Drain Current-Single Pluse
6.0
A
PD
Total Dissipation @TC=25℃
20
W
TJ
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 6.25
UNIT ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS= 10V; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 15V; ID= 2.0A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 80V; VGS= 0
VSD
Forward On-Voltage
IS= 2.0A; VGS= 0
2SK429L
MIN MAX UNIT
100
--
V
1.0
4.0
V
--
0.7
Ω
--
±1.0 uA
--
1.0
mA
--
1.5
V
NOTICE： ISC reserves the rights to make cha...
