2SK580S

isc N-Channel MOSFET Transistor 2SK580S FEATURES ·Drain Current : ID= 1.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±15 V ID Drain Current-Continuous 1.5 A IDM Drain Current-Single Pluse 6.0 A PD Total Dissipation @TC=25℃ 20 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 6.25 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID= 1.0mA VGS= 10V; ID= 1.0A VGS= ±12V;VDS= 0 VDS= 360V; VGS= 0 IS= 1.5A; VGS= 0 2SK580S MIN MAX UNIT 400 -- V 2.0 4.0 V -- 6.0 Ω -- ±10 uA -- 100 uA -- 1.0 V NOTICE： ISC reserves the rights to make changes o...