FDG6306P

FDG6306P www.onsemi.com FDG6306P P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications Battery management Load switch Features –0.6 A, –20 V. RDS(ON) = 420 mΩ @ VGS = –4.5 V RDS(ON) = 630 mΩ @ VGS = –2.5 V Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package S G D S 1 or 4 Pin 1 D G S G 2 or 5 D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. 6 or 3 D 5 or 2 G 4 or 1 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS V GSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1) – Pulsed Power Dissipation for Single Operation (Note 1) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size .06 FDG6306P 7’’ Ratings –20 ± 12 –0.6 –2.0 0.3 –55 to +150 415 Tape width 8mm Units V V A W °C °C/W Quantity 3000 units Semiconductor Components Industries, LLC, 2017 Aug, 2017, Rev.1.4 Publication Order Number: FDG6306P FDG6306P W Electrical Characteristics Symbol Parameter TA ...