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2SK3598-01 Dataheets PDF



Part Number 2SK3598-01
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Datasheet 2SK3598-01 Datasheet2SK3598-01 Datasheet (PDF)

2SK3598-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 100 V VDSX *5 70 V Continuous .

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2SK3598-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 100 V VDSX *5 70 V Continuous drain current ID ±29 A Pulsed drain current ID(puls] ±116 A Gate-source voltage VGS ±30 V Non-repetitive Avalanche current IAS *2 29 A Maximum Avalanche Energy EAS *1 155.8 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs Max. power dissipation PD Ta=25°C 2.02 W Tc=25°C 105 Operating and storage Tch +150 °C temperature range Tstg -55 to +150 °C *1 L=222µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch <= 150°C *3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 100V *5 VGS=-30V Electrical characteristics (Tc =25°C unless otherwise specified) Equivalent circuit schematic Drain(D) Gate(G) Source(S) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=100V VGS=0V VDS=80V VGS=0V VGS=±30V VDS=0V Tch=25°C Tch=125°C ID=10A VGS=10V ID=10A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=10A VGS=10V RGS=10 Ω VCC=50V ID=20A VGS=10V L=222µH Tch=25°C IF=20A VGS=0V Tch=25°C IF=20A VGS=0V -di/dt=100A/µs Tch=25°C Min. 100 3.0 6 29 Typ. Max. Units V 5.0 V 25 µA 250 10 100 nA 47 62 mΩ 12 S 730 1095 pF 190 285 12 18 12 18 ns 3.8 6 23 35 8.5 13 22 33 nC 9 13.5 6 9 1.10 65 0.17 A 1.65 V ns µC Thermalcharacteristics Item Thermal resistance www.fujielectric.co.jp/denshi/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. Units 1.191 °C/W 62.0 °C/W 1 2SK3598-01 Characteristics PD [W] Allowable Power Dissipation PD=f(Tc) 120 100 80 60 40 20 0 0 25 50 75 100 125 150 Tc [°C] Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25°C 80 20V 10V 60 ID [A] 8V 40 7.5V 7.0V 20 6.5V 6.0V VGS=5.5V 0 0 2 4 6 8 10 12 VDS [V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 100 10 gfs [S] 1 0.1 0.1 1 10 100 ID [A] RDS(on) [ Ω ] ID[A] EAS [mJ] FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V 400 I =12A 350 AS 300 I =17A AS 250 200 I =29A AS 150 100 50 0 0 25 50 75 100 125 150 starting Tch [°C] Typical Transfer Characteristic ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 100 10 1 0.1 0 1 2 3 4 5 6 7 8 9 10 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C 0.18 VGS= 5.5V 6.0V 6.5V 7.0V 7.5V 8V 0.15 0.12 0.09 10V 0.06 20V 0.03 0.00 0 10 20 30 40 50 60 ID [A] 2 2SK3598-01 FUJI POWER MOSFET RDS(on) [ m Ω ] VGS [V] Drain-Source On-state Resistance RDS(on)=f(Tch):ID=10A,VGS=10V 150 125 100 max. 75 50 typ. 25 0 -50 -25 0 25 50 75 100 125 150 Tch [°C] VGS(th) [V] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 7.0 6.5 6.0 5.5 5.0 max. 4.5 4.0 3.5 3.0 min. 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 Tch [°C] Typical Gate Charge Characteristics VGS=f(Qg):ID=20A, Tch=25°C 14 12 10 8 Vcc= 50V 6 4 2 0 0 10 20 30 40 Qg [nC] C [nF] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 101 100 10-1 10-2 10-1 Ciss Coss 100 101 VDS [V] Crss 102 Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID IF=f(VSD):80µs Pulse test,Tch=25°C 100 t=f(ID):Vcc=48V, VGS=10V, RG=10Ω 103 tf 10 102 t [ns] td(off) td(on) 1 101 tr 0.1 100 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10-1 100 101 102 VSD [V] ID [A] 3 IF [A] 2SK3598-01 Avalanche Current I [A] AV Maximum Avalanche Current Pulsewidth 102 I =f(t ):starting AV AV Tch=25°C,Vcc=48V Single Pulse 101 100 10-1 10-2 10-8 10-7 10-6 10-5 10-4 10-3 10-2 t [sec] AV Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 101 100 10-1 10-2 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 t [sec] Zth(ch-c) [°C/W] FUJI POWER MOSFET http://www.fujielectric.co.jp/denshi/scd/ 4 .


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