Document
2SK3598-01
FUJI POWER MOSFET
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220AB
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
100
V
VDSX *5
70
V
Continuous drain current
ID
±29
A
Pulsed drain current
ID(puls]
±116
A
Gate-source voltage
VGS
±30
V
Non-repetitive Avalanche current IAS *2
29
A
Maximum Avalanche Energy
EAS *1
155.8
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5
kV/µs
Max. power dissipation
PD Ta=25°C
2.02
W
Tc=25°C
105
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=222µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch <= 150°C *3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 100V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item Drain-source breakdown voltaget Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton
Turn-off time toff
Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge
Symbol V(BR)DSS VGS(th)
IDSS
IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr
Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS
VDS=100V VGS=0V
VDS=80V VGS=0V VGS=±30V VDS=0V
Tch=25°C Tch=125°C
ID=10A VGS=10V
ID=10A VDS=25V VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=10A
VGS=10V
RGS=10 Ω
VCC=50V ID=20A VGS=10V L=222µH Tch=25°C IF=20A VGS=0V Tch=25°C IF=20A VGS=0V -di/dt=100A/µs Tch=25°C
Min. 100
3.0 6
29
Typ. Max. Units
V
5.0
V
25
µA
250
10
100
nA
47
62
mΩ
12
S
730 1095
pF
190
285
12
18
12
18
ns
3.8
6
23
35
8.5
13
22
33
nC
9
13.5
6
9
1.10 65
0.17
A 1.65 V
ns µC
Thermalcharacteristics Item Thermal resistance
www.fujielectric.co.jp/denshi/scd
Symbol Rth(ch-c) Rth(ch-a)
Test Conditions channel to case channel to ambient
Min. Typ.
Max. Units 1.191 °C/W
62.0 °C/W
1
2SK3598-01
Characteristics
PD [W]
Allowable Power Dissipation PD=f(Tc)
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
80 20V
10V
60
ID [A]
8V 40
7.5V
7.0V
20
6.5V
6.0V
VGS=5.5V
0
0
2
4
6
8
10
12
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
gfs [S]
1
0.1 0.1
1
10
100
ID [A]
RDS(on) [ Ω ]
ID[A]
EAS [mJ]
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V
400
I =12A 350 AS
300 I =17A
AS
250
200
I =29A
AS
150
100
50
0
0
25
50
75
100
125
150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10 VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.18
VGS=
5.5V 6.0V 6.5V 7.0V 7.5V
8V
0.15
0.12
0.09 10V
0.06 20V
0.03
0.00 0
10
20
30
40
50
60
ID [A]
2
2SK3598-01
FUJI POWER MOSFET
RDS(on) [ m Ω ]
VGS [V]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=10A,VGS=10V
150
125
100 max.
75
50 typ.
25
0 -50 -25 0
25 50 75 100 125 150
Tch [°C]
VGS(th) [V]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0
max.
4.5
4.0
3.5
3.0
min.
2.5
2.0
1.5
1.0
0.5
0.0 -50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics VGS=f(Qg):ID=20A, Tch=25°C
14
12
10
8 Vcc= 50V
6
4
2
0
0
10
20
30
40
Qg [nC]
C [nF]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
101
100 10-1 10-2
10-1
Ciss Coss
100
101
VDS [V]
Crss 102
Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID
IF=f(VSD):80µs Pulse test,Tch=25°C
100
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
103
tf
10
102
t [ns]
td(off)
td(on)
1
101
tr
0.1
100
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
10-1
100
101
102
VSD [V]
ID [A]
3
IF [A]
2SK3598-01
Avalanche Current I [A] AV
Maximum Avalanche Current Pulsewidth
102
I =f(t ):starting
AV AV
Tch=25°C,Vcc=48V
Single Pulse 101
100
10-1
10-2 10-8
10-7
10-6
10-5
10-4
10-3
10-2
t [sec]
AV
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
Zth(ch-c) [°C/W]
FUJI POWER MOSFET
http://www.fujielectric.co.jp/denshi/scd/ 4
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