2SK4210

isc N-Channel MOSFET Transistor 2SK4210 FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 20 A PD Total Dissipation @TC=25℃ 190 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.66 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID= 1.0mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 720V; VGS= 0 VSD Forward On-Voltage IS= 10A; VGS= 0 2SK4210 MIN MAX UNIT 900 -- V 2.0 4.0 V -- 1.3 Ω -- ±0.1 uA -- 1.0 mA -- 1.2 V NOTICE： ISC reserves the rights to make changes ...