2SK4212A

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4212A SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4212A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4.5 V, ID = 20 A) Low total gate charge QG = 24 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A) 4.5 V drive available Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SK4212A-ZK-E1-AY Note 2SK4212A-ZK-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode). PACKAGE TO-252 (MP-3ZK) typ. 0.27 g ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±48 A ±125 A Total Power Dissipation (TC = 25°C) PT1 35 W Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg −55 to +150 °C IAS 16 A EAS 25 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH (TO-252) The information in this document is subject to chang...