2SK4221

Ordering number : ENA1518 2SK4221 SANYO Semiconductors DATA SHEET 2SK4221 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=99V, L=5mH, IAV=14A *2 L≤5mH, Single pulse Electrical Characteristics at Ta=25°C Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings Unit 500 V ±30 V 26 A 90 A 2.5 W 220 W 150 °C --55 to +150 °C 608 mJ 14 A Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Marking : K4221 Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) ID=10mA, VGS=0V VDS=400V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA min 500 3 Ratings Unit typ max V 100 μA ±100 nA 5 V Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.)....