2SK4227JS

Ordering number : ENA1355 2SK4227JS SANYO Semiconductors DATA SHEET 2SK4227JS Features Low ON-resistance. Motor drive. Avalanche resistance guarantee. 10V drive. N-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=30V, L=50μH, IAV=48A *2 L≤50μH, Single pulse Electrical Characteristics at Ta=25°C Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings Unit 75 V ±20 V 48 A 192 A 2.0 W 35 W 150 °C --55 to +150 °C 100 mJ 48 A Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Marking : K4227 Symbol Conditions V(BR)DSS IDSS IGSS ID=1mA, VGS=0V VDS=75V, VGS=0V VGS=±16V, VDS=0V min 75 Ratings Unit typ max V 1 μA ±10 μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose...