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BT258S-800R

INCHANGE

Thyristors

isc Thyristors BT258S-800R APPLICATIONS ·It is suitable to fit all modes of control found in applications such as over...


INCHANGE

BT258S-800R

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isc Thyristors BT258S-800R APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crowbar protection,motor control circuits in power tools and kitchen aids,in-rush current limiting circuits, . capacitive discharge ignition, voltage regulation circuits etc. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(AV) IT(RMS) Repetitive peak off-state voltage Repetitive peak reverse voltage On-state current Tc=80℃ RMS on-state current ITSM Surge non-repetitive on-state current PG(AV) Average gate power TP=10ms di/dt Repetitive rate of rise of on-state current after triggering Tj=125℃ I2t I2t for fusing t = 10 ms IGM Peak gate current tp=20us ,Tj=125℃ Tj Operating Junction temperature Tstg Storage temperature MIN 800 800 5 8 75 0.5 50 28 2 -40 ~+125 -40 ~+150 UNIT V V A A A W A/us A2S A ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IH Holding current IL Latching current VRRM= 800V, Tj=125℃ VDRM= 800V, Tj=125℃ ITM= 16A VD=12V; IT=0.1A VD=12V; IT=0.1A IT=0.5A IG=1.2IGT dv/dt Critical rate of rise of off-state voltage VD=2/3VDRM Tj=125℃ Rth(j-c) Thermal resistance junction to mounting base MIN MAX 0.5 0.5 1.6 0.2 1.0 30...




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