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BYT79B-600P

Inchange Semiconductor

Ultrafast Recovery Rectifier

Ultrafast Recovery Rectifier BYT79B-600P FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·...


Inchange Semiconductor

BYT79B-600P

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Description
Ultrafast Recovery Rectifier BYT79B-600P FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching power supplies,Power switching circuits,General purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current (Rated VR) IFRM Peak Repetitive Forward Current 600 V 15 A 30 A IFSM Nonrepetitive Peak Surge Current 150 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.2 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark Ultrafast Recovery Rectifier BYT79B-600P ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX IF= 15A VF* Maximum Instantaneous Forward Voltage IF= 15A ,Tc=125℃ 1.38 1.25 VRRM= 600V 10 IR Maximum Instantaneous Reverse Current VRRM= 600V ,Tc=125℃ 200 trr Maximum Reverse Recovery Time IF=1A IR=1.0A IREC=0.25A 60 *:Pulse test ,Pulse width=300us,duty cycle≤2% UNIT V μA ns NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our prod...




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