isc N-Channel MOSFET Transistor
IPW65R048CFDA
FEATURES ·Drain Current : ID= 63.3A@ TC=25℃ ·Drain Source Voltage
: VDSS...
isc N-Channel MOSFET
Transistor
IPW65R048CFDA
FEATURES ·Drain Current : ID= 63.3A@ TC=25℃ ·Drain Source Voltage
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.048Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
63.3
A
IDM
Drain Current-Single Pluse
228
A
PD
Total Dissipation @TC=25℃
500
W
TJ
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.25
UNIT ℃/W
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isc N-Channel MOSFET
Transistor
IPW65R048CFDA
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
CONDITIONS VGS= 0; ID= 1mA VDS= 10V; ID= 2.9mA VGS= 10V; ID= 29.4A VGS= ±20V;VDS= 0 VDS= 650V; VGS= 0 IS= 44.2A; VGS= 0
MIN MAX UNIT
650
--
V
3.4
4.5
V
--
0.048
Ω
--
±0.1
uA
--
3
uA
--
0.9
V
NOTICE： ISC reserves the right...
