DatasheetsPDF.com

N24RF16E Dataheets PDF



Part Number N24RF16E
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description RFID 16-Kb EEPROM
Datasheet N24RF16E DatasheetN24RF16E Datasheet (PDF)

N24RF16E RFID 16 Kb EEPROM Tag ISO 15693 RF, I2C Bus, Energy Harvesting Description The N24RF16E is a RFID/NFC tag with a 16 Kb EEPROM device, offering both contactless and contact interface. In addition to the ISO/IEC 15693 radio frequency identification (RFID) interface protocol, the device features an I2C interface to communicate with a microcontroller. The I2C contact interface requires an external power supply. The 16 Kb EEPROM array is internally organized as 512 x 32 bits in RF mode and .

  N24RF16E   N24RF16E



Document
N24RF16E RFID 16 Kb EEPROM Tag ISO 15693 RF, I2C Bus, Energy Harvesting Description The N24RF16E is a RFID/NFC tag with a 16 Kb EEPROM device, offering both contactless and contact interface. In addition to the ISO/IEC 15693 radio frequency identification (RFID) interface protocol, the device features an I2C interface to communicate with a microcontroller. The I2C contact interface requires an external power supply. The 16 Kb EEPROM array is internally organized as 512 x 32 bits in RF mode and as 2048 x 8 bits when accessed from the I2C interface. Features • Contactless Transmission of Data • ISO 15693 / ISO 18000−3 Mode1 Compliant ♦ Vicinity Range Communication (up to 150 cm) ♦ Air Interface Communication at 13.56 MHz (HF) ♦ To Tag: ASK Modulation with 1.65 Kbit/s or 26.48 Kbit/s Data Rate ♦ From Tag: Load Modulation Using Manchester Coding with 423 kHz and 484 kHz Subcarriers in Low (6.6 Kbit/s) or High (26 Kbit/s) Data Rate Mode. Supports the 53 Kbit/s Data Rate with Fast Commands • Read & Write 32−bit Block Mode • Anti−collision Support • Security: ♦ 64−bit Unique Identifier (UID) ♦ Multiple 32−bit Passwords and Lock Feature for Each User Memory Sector • Supports Fast (400 kHz) and Fast−Plus (1 MHz) I2C Protocol • 1.8 V to 5.5 V Supply Voltage Range • 4−Byte Page Write Buffer • I2C Timeout • Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs (SCL and SDA) • 512 Blocks x 32 Bits (16 Sectors of 32 Blocks Each): RF Mode • 2048 x 8 Bits I2C Mode • 2,000,000 Program/Erase Cycles • 200 Year Data Retention • −40_C to +105_C Temperature Range • Configurable Output Pin: RF Write in Progress or RF Busy • Energy Harvesting Analog Output • SOIC, TSSOP 8−lead Packages • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* www.onsemi.com SOIC 8 CASE 751BD TSSOP8, 4.4x3 CASE 948AL PIN CONFIGURATION VOUT VCC AN1 RF WIP/BUSY AN2 SCL VSS SDA SOIC (W, X), TSSOP (Y) PIN FUNCTION Pin Name Function SDA Serial Data SCL Serial Clock AN1, AN2 Antenna Coil VCC VSS VOUT RF WIP/BUSY Power Supply Ground Energy Harvesting Output Internal Write or RF command in progress MARKING DIAGRAMS RF16EH AYMZZZ 16EH AYMZZZ A = Assembly Site Code Y = Production Year (Last Digit) M = Production Month Code ZZZ = Last 3 Characters of Assembly Lot Number ORDERING INFORMATION See detailed ordering and shipping information on page 22 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2017 1 November, 2018 − Rev. 1 Publication Order Number: N24RF16E/D N24RF16E VCC AN1 AN2 VOUT N24RF16E SCL SDA RF WIP/BUSY VSS Figure 1. Functional Symbol Table 1. ABSOLUTE MAXIMUM RATINGS Parameter Rating Unit Storage Temperature −65 to +150 °C Ambient Operating Temperature −40 to +105 °C Voltage on SCL, SDA, RF WIP/BUSY and VCC pins with respect to Ground (Note 1) −0.5 to 6.5 V RF Input Voltage Peak to Peak Amplitude between AN1 and AN2, VSS pad floating 28 V AC Voltage on AN1 or AN2 with respect to GND −1 to 15 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. During transitions, the voltage undershoot on any pin should not exceed 1 V for more than 20 ns. Voltage overshoot on the SCL and SDA I2C pins should not exceed the absolute maximum ratings, irrespective of VCC. Table 2. RELIABILITY CHARACTERISTICS − EEPROM (Note 2) Symbol Parameter Test Conditions NEND Endurance TA ≤ 25_C, 1.8 V < VCC < 5.5 V TA = 85_C, 1.8 V < VCC < 5.5 V TA = 105_C, 1.8 V < VCC < 5.5 V TDR Data Retention TA = 25_C 2. Determined through qualification/characterization. 3. A Write Cycle refers to writing a Byte or a Page. Max 2,000,000 800,000 300,000 200 Unit Write Cycles (Note 3) Year www.onsemi.com 2 N24RF16E Table 3. DC CHARACTERISTICS − I2C MODE (VCC = 1.8 V to 5.5 V, TA = −40°C to +105°C, unless otherwise specified) Symbol Parameter Test Conditions Min Max Unit ICCR Supply Current (Read Mode) Read, fSCL = 400 kHz ICCW Supply Current (Write Mode) Write Cycle VCC = 1.8 V VCC = 2.5 V VCC = 5.5 V − 0.15 mA − 0.2 − 0.3 − 0.4 mA ISB1 Standby Current VIN = GND or VCC No RF Field on antenna coil Both VCC Supply and RF Field on antenna coil − 10 mA − 100 mA IL Input Leakage Current VIN = GND or VCC −2 2 mA ILO Output Leakage Current SDA = Hi Z, VOUT = GND or VCC −2 2 mA VIL1 Input Low Voltage VCC ≥ 2.5 V −0.5 0.3 VCC V VIH1 Input High Voltage VCC ≥ 2.5 V 0.7 VCC VCC+0.5 V VIL2 Input Low Voltage VCC < 2.5 V −0.5 0.25 VCC V VIH2 Input High Voltage VCC < 2.5 V 0.75 VCC .


N24RF16 N24RF16E N24RF64E


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)