Document
N24RF16E
RFID 16 Kb EEPROM Tag ISO 15693 RF, I2C Bus, Energy Harvesting
Description The N24RF16E is a RFID/NFC tag with a 16 Kb EEPROM device,
offering both contactless and contact interface. In addition to the ISO/IEC 15693 radio frequency identification (RFID) interface protocol, the device features an I2C interface to communicate with a microcontroller. The I2C contact interface requires an external power supply.
The 16 Kb EEPROM array is internally organized as 512 x 32 bits in RF mode and as 2048 x 8 bits when accessed from the I2C interface.
Features
• Contactless Transmission of Data • ISO 15693 / ISO 18000−3 Mode1 Compliant
♦ Vicinity Range Communication (up to 150 cm) ♦ Air Interface Communication at 13.56 MHz (HF) ♦ To Tag: ASK Modulation with 1.65 Kbit/s or 26.48 Kbit/s Data
Rate ♦ From Tag: Load Modulation Using Manchester Coding with
423 kHz and 484 kHz Subcarriers in Low (6.6 Kbit/s) or High (26 Kbit/s) Data Rate Mode. Supports the 53 Kbit/s Data Rate with Fast Commands
• Read & Write 32−bit Block Mode • Anti−collision Support • Security:
♦ 64−bit Unique Identifier (UID) ♦ Multiple 32−bit Passwords and Lock Feature for Each User
Memory Sector
• Supports Fast (400 kHz) and Fast−Plus (1 MHz) I2C Protocol • 1.8 V to 5.5 V Supply Voltage Range • 4−Byte Page Write Buffer • I2C Timeout • Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs
(SCL and SDA)
• 512 Blocks x 32 Bits (16 Sectors of 32 Blocks Each): RF Mode • 2048 x 8 Bits I2C Mode • 2,000,000 Program/Erase Cycles • 200 Year Data Retention • −40_C to +105_C Temperature Range • Configurable Output Pin: RF Write in Progress or RF Busy • Energy Harvesting Analog Output • SOIC, TSSOP 8−lead Packages • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
www.onsemi.com
SOIC 8 CASE 751BD
TSSOP8, 4.4x3 CASE 948AL
PIN CONFIGURATION
VOUT
VCC
AN1
RF WIP/BUSY
AN2
SCL
VSS
SDA
SOIC (W, X), TSSOP (Y)
PIN FUNCTION
Pin Name
Function
SDA
Serial Data
SCL
Serial Clock
AN1, AN2
Antenna Coil
VCC VSS VOUT RF WIP/BUSY
Power Supply Ground
Energy Harvesting Output Internal Write or RF command in progress
MARKING DIAGRAMS
RF16EH AYMZZZ
16EH AYMZZZ
A = Assembly Site Code Y = Production Year (Last Digit) M = Production Month Code ZZZ = Last 3 Characters of Assembly Lot Number
ORDERING INFORMATION
See detailed ordering and shipping information on page 22 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2017
1
November, 2018 − Rev. 1
Publication Order Number: N24RF16E/D
N24RF16E
VCC
AN1 AN2 VOUT
N24RF16E
SCL SDA RF WIP/BUSY
VSS Figure 1. Functional Symbol
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Unit
Storage Temperature
−65 to +150
°C
Ambient Operating Temperature
−40 to +105
°C
Voltage on SCL, SDA, RF WIP/BUSY and VCC pins with respect to Ground (Note 1)
−0.5 to 6.5
V
RF Input Voltage Peak to Peak Amplitude between AN1 and AN2, VSS pad floating
28
V
AC Voltage on AN1 or AN2 with respect to GND
−1 to 15
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. During transitions, the voltage undershoot on any pin should not exceed 1 V for more than 20 ns. Voltage overshoot on the SCL and SDA I2C
pins should not exceed the absolute maximum ratings, irrespective of VCC.
Table 2. RELIABILITY CHARACTERISTICS − EEPROM (Note 2)
Symbol
Parameter
Test Conditions
NEND
Endurance
TA ≤ 25_C, 1.8 V < VCC < 5.5 V
TA = 85_C, 1.8 V < VCC < 5.5 V
TA = 105_C, 1.8 V < VCC < 5.5 V
TDR
Data Retention
TA = 25_C
2. Determined through qualification/characterization. 3. A Write Cycle refers to writing a Byte or a Page.
Max 2,000,000 800,000 300,000
200
Unit Write Cycles (Note 3)
Year
www.onsemi.com 2
N24RF16E
Table 3. DC CHARACTERISTICS − I2C MODE (VCC = 1.8 V to 5.5 V, TA = −40°C to +105°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min
Max
Unit
ICCR
Supply Current (Read Mode)
Read, fSCL = 400 kHz
ICCW Supply Current (Write Mode) Write Cycle
VCC = 1.8 V VCC = 2.5 V VCC = 5.5 V
−
0.15
mA
−
0.2
−
0.3
−
0.4
mA
ISB1 Standby Current
VIN = GND or VCC No RF Field on antenna coil Both VCC Supply and RF Field on antenna coil
−
10
mA
−
100
mA
IL
Input Leakage Current
VIN = GND or VCC
−2
2
mA
ILO Output Leakage Current
SDA = Hi Z, VOUT = GND or VCC
−2
2
mA
VIL1 Input Low Voltage
VCC ≥ 2.5 V
−0.5
0.3 VCC
V
VIH1 Input High Voltage
VCC ≥ 2.5 V
0.7 VCC VCC+0.5
V
VIL2 Input Low Voltage
VCC < 2.5 V
−0.5 0.25 VCC
V
VIH2 Input High Voltage
VCC < 2.5 V
0.75 VCC .