Document
EEPROM Serial 1/2/4-Kb SPI Automotive Grade 1 in Wettable Flank UDFN8 Package
NV25010MUW, NV25020MUW, NV25040MUW
Description The NV25010/20/40 are a EEPROM Serial 1/2/4−Kb SPI
Automotive Grade 1 devices internally organized as 128x8/256x8/512x8 bits. They feature a 16−byte page write buffer and support the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus signals are a clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the NV25010/20/40 device. These devices feature software and hardware write protection, including partial as well as full array protection.
Features
• Automotive AEC−Q100 Grade 1 (−40°C to +125°C) Qualified • 10 MHz SPI Compatible • 1.8 V to 5.5 V Supply Voltage Range • SPI Modes (0,0) & (1,1) • 16−byte Page Write Buffer • Self−timed Write Cycle • Hardware and Software Protection • Block Write Protection
− Protect 1/4, 1/2 or Entire EEPROM Array
• Low Power CMOS Technology • 1,000,000 Program/Erase Cycles • 100 Year Data Retention • Wettable Flank UDFN 8−pad Package • These Devices are Pb−Free, Halogen Free/BFR Free, and RoHS
Compliant
VCC
SI
CS
NV25010/20/40
WP
SO
HOLD SCK
VSS Figure 1. Functional Symbol
www.onsemi.com
1
UDFN8 (Wettable Flank) MUW3 SUFFIX
CASE 517DH
PIN CONFIGURATIONS
CS 1 SO WP VSS
UDFN8 (MUW3) (Top View)
VCC HOLD SCK SI
Pin Name CS SO WP VSS SI SCK
HOLD VCC
PIN FUNCTION Function
Chip Select Serial Data Output Write Protect Ground Serial Data Input Serial Clock Hold Transmission Input Power Supply
ORDERING INFORMATION
See detailed ordering and shipping information on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
July, 2020 − Rev. 3
Publication Order Number: NV25010MUW/D
NV25010MUW, NV25020MUW, NV25040MUW
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Unit
Operating Temperature
−45 to +130
°C
Storage Temperature
−65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
−0.5 to VCC + 0.5
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
NEND (Note 3) TDR
Endurance Data Retention
Min 1,000,000
100
Unit Program / Erase Cycles
Years
Table 3. DC OPERATING CHARACTERISTICS (VCC = 1.8 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Unit
ICCR ICCW ISB1
Supply Current (Read Mode) Supply Current (Write Mode) Standby Current
ISB2
Standby Current
IL
Input Leakage Current
ILO
Output Leakage Current
Read, VCC = 5.5 V, 10 MHz, SO open Write, VCC = 5.5 V, 10 MHz, SO open VIN = GND or VCC, CS = VCC, WP = VCC, VCC = 5.5 V
VIN = GND or VCC, CS = VCC, WP = GND, VCC = 5.5 V
VIN = GND or VCC CS = VC.