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NV24C64MUW Dataheets PDF



Part Number NV24C64MUW
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description EEPROM
Datasheet NV24C64MUW DatasheetNV24C64MUW Datasheet (PDF)

EEPROM Serial 64-Kb I2C Automotive Grade 1 in Wettable Flank UDFN8 Package NV24C64MUW Description The NV24C64MUW is a EEPROM Serial 64−Kb I2C Automotive Grade 1 device, organized internally as 256 pages of 32 bytes each. This device supports the Standard (100 kHz), Fast (400 kHz) and Fast−Plus (1 MHz) I2C protocol. Data is written by providing a starting address, then loading 1 to 32 contiguous bytes into a Page Write Buffer, and then writing all data to non−volatile memory in one internal write.

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EEPROM Serial 64-Kb I2C Automotive Grade 1 in Wettable Flank UDFN8 Package NV24C64MUW Description The NV24C64MUW is a EEPROM Serial 64−Kb I2C Automotive Grade 1 device, organized internally as 256 pages of 32 bytes each. This device supports the Standard (100 kHz), Fast (400 kHz) and Fast−Plus (1 MHz) I2C protocol. Data is written by providing a starting address, then loading 1 to 32 contiguous bytes into a Page Write Buffer, and then writing all data to non−volatile memory in one internal write cycle. Data is read by providing a starting address and then shifting out data serially while automatically incrementing the internal address count. External address pins make it possible to address up to eight NV24C64MUW devices on the same bus. Features • Automotive AEC−Q100 Grade 1 (−40°C to +125°C) Qualified • Supports Standard, Fast and Fast−Plus I2C Protocol • 1.8 V to 5.5 V Supply Voltage Range • 32−Byte Page Write Buffer • Fast Write Time (4 ms max) • Hardware Write Protection for Entire Memory • Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs (SCL and SDA) • Low Power CMOS Technology • 1,000,000 Program/Erase Cycles • 100 Year Data Retention • Industrial and Automotive Grade 1 Temperature Range • Wettable Flank UDFN 8−pad Packages • These Devices are Pb−Free, Halogen Free/BFR Free, and RoHS Compliant www.onsemi.com 1 UDFN8 MUW3 SUFFIX CASE 517DH 1 C6W AWLYWG C6W A WL Y W G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package PIN CONFIGURATION A0 1 A1 A2 VSS (Top View) VCC WP SCL SDA For the location of Pin 1, please consult the corresponding package drawing. Pin Name A0, A1, A2 SDA SCL WP VCC VSS PIN FUNCTION Function Device Address Inputs Serial Data Input/Output Serial Clock Input Write Protect Input Power Supply Ground © Semiconductor Components Industries, LLC, 2017 July, 2020 − Rev. 3 ORDERING INFORMATION See detailed ordering, marking and shipping information on page 8 of this data sheet. 1 Publication Order Number: NV24C64MUW/D NV24C64MUW VCC SCL A2, A1, A0 WP NV24C64WF SDA VSS US8 Figure 1. Functional Symbol Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Unit Storage Temperature –65 to +150 °C Voltage on Any Pin with Respect to Ground (Note 1) –0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns. Table 2. RELIABILITY CHARACTERISTICS Symbol Parameter NEND (Note 2) Endurance TDR (Note 2) Data Retention 2. TA = 25°C 3. A Write Cycle refers to writing a Byte or a Page. Max 1,000,000 100 Unit Write Cycles (Note 3) Years T.



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