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EEPROM Serial 64-Kb I2C Automotive Grade 1 in Wettable Flank UDFN8 Package
NV24C64MUW
Description The NV24C64MUW is a EEPROM Serial 64−Kb I2C Automotive
Grade 1 device, organized internally as 256 pages of 32 bytes each. This device supports the Standard (100 kHz), Fast (400 kHz) and Fast−Plus (1 MHz) I2C protocol.
Data is written by providing a starting address, then loading 1 to 32 contiguous bytes into a Page Write Buffer, and then writing all data to non−volatile memory in one internal write cycle. Data is read by providing a starting address and then shifting out data serially while automatically incrementing the internal address count.
External address pins make it possible to address up to eight NV24C64MUW devices on the same bus.
Features
• Automotive AEC−Q100 Grade 1 (−40°C to +125°C) Qualified • Supports Standard, Fast and Fast−Plus I2C Protocol • 1.8 V to 5.5 V Supply Voltage Range • 32−Byte Page Write Buffer • Fast Write Time (4 ms max) • Hardware Write Protection for Entire Memory • Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs
(SCL and SDA)
• Low Power CMOS Technology • 1,000,000 Program/Erase Cycles • 100 Year Data Retention • Industrial and Automotive Grade 1 Temperature Range • Wettable Flank UDFN 8−pad Packages • These Devices are Pb−Free, Halogen Free/BFR Free, and RoHS
Compliant
www.onsemi.com
1
UDFN8 MUW3 SUFFIX CASE 517DH
1 C6W
AWLYWG
C6W A WL Y W G
= Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package
PIN CONFIGURATION
A0
1
A1
A2
VSS
(Top View)
VCC WP SCL SDA
For the location of Pin 1, please consult the corresponding package drawing.
Pin Name A0, A1, A2
SDA SCL WP VCC VSS
PIN FUNCTION Function
Device Address Inputs Serial Data Input/Output Serial Clock Input Write Protect Input Power Supply Ground
© Semiconductor Components Industries, LLC, 2017
July, 2020 − Rev. 3
ORDERING INFORMATION
See detailed ordering, marking and shipping information on page 8 of this data sheet.
1
Publication Order Number:
NV24C64MUW/D
NV24C64MUW
VCC
SCL A2, A1, A0
WP
NV24C64WF
SDA
VSS US8 Figure 1. Functional Symbol
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Unit
Storage Temperature
–65 to +150
°C
Voltage on Any Pin with Respect to Ground (Note 1)
–0.5 to +6.5
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS
Symbol
Parameter
NEND (Note 2) Endurance TDR (Note 2) Data Retention 2. TA = 25°C 3. A Write Cycle refers to writing a Byte or a Page.
Max 1,000,000
100
Unit Write Cycles (Note 3)
Years
T.
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