isc N-Channel MOSFET Transistor
STFW4N150
·FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 1500V...
isc N-Channel MOSFET
Transistor
STFW4N150
·FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 1500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) < 7Ω ·Fast Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
1500
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
4
A
IDM
Drain Current-Single Plused
12
A
PD
Total Dissipation @TC=25℃
40
W
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 3.125 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID=250uA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 2A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 1500V; VGS= 0
VDS= 1500V; VGS= 0;Tj=125℃
VSD
Diode Forward On-voltage
IS= 4A ;VGS= 0
STFW4N150
MIN MAX UNIT
1500
V
3
5
V
7
Ω
±100 nA
10 500
µA
2.0
V
NOTICE： ISC reserves the rights to make changes of the cont...
