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STPS60170CT

Inchange Semiconductor

Schottky Barrier Rectifier

Schottky Barrier Rectifier FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Te...


Inchange Semiconductor

STPS60170CT

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Schottky Barrier Rectifier FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High surge capability ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM IF(AV) IFSM TJ Peak Repetitive Reverse Voltage Average Rectified Forward Current Nonrepetitive Peak Surge Current Junction Temperature Tstg Storage Temperature Range dv/dt Voltage Rate of Change (Rated VR) THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case STPS60170CT VALUE UNIT 170 V 60 A 270 A -65~175 ℃ -65~175 ℃ 10,000 V/μs MAX 1.0 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier STPS60170CT ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS IF= 30A ; TC= 25℃ VF Maximum Instantaneous Forward Voltage IF= 30A ; TC= 125℃ IF= 60A ; TC= 25℃ IF= 60A ; TC= 125℃ Rated DC Voltage, TC= 25℃ IR Maximum Instantaneous Reverse Current Rated DC Voltage, TC= 125℃ MAX 0.94 0.76 1.05 0.92 35 35 UNIT V uA mA NOT...




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