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STTH506B

Inchange Semiconductor

Ultrafast Recovery Rectifier

Ultrafast Recovery Rectifier FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operatin...


Inchange Semiconductor

STTH506B

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Description
Ultrafast Recovery Rectifier FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·Power switching circuits ·General purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) 600 V 5 A IF(RMS) RMS forward current 10 A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ STTH506B isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark Ultrafast Recovery Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case STTH506B MAX 3.5 UNIT ℃/W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS IF= 5A ,Tc=25℃ VF* Maximum Instantaneous Forward Voltage IF= 5A ,Tc=150℃ VRRM= 600V,Tc=25℃ IR Maximum Instantaneous Reverse Current VRRM= 600V ,Tc=150℃ trr Maximum Reverse Recovery Time IF = 0.5 A, Irr = 0.25 A, IR = 1 A, Tj = 25° C *:Pulse test ,Pulse width=300us,duty cycle≤2% MAX 1.85 1.4 5 130 UNIT V μA 30 ns NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC produc...




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