TMG3C60F

isc Triacs TMG3C60F FEATURES ·With TO-220F insulated package ·Suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ·Minimum Lot-to-Lot variations for robust device performance and reliable Operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) RMS on-state current (full sine wave)Tj=90℃ ITSM Non-repetitive peak on-state current tp=10ms Tj Operating junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case MIN UNIT 600 V 600 V 3.0 A 27 A -40~125 ℃ -40~150 ℃ 5.0 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=110℃ IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=110℃ Ⅰ-Ⅱ-Ⅲ IGT Gate trigger current VD=12V; RL= 33Ω Ⅳ IH Holding current IGT= 0.1A, Gate Open VGT Gate trigger voltage all quadrant VD=12V; RL= 30Ω VTM On-state voltage IT= 4.5A MAX 0.01 0.75 0.01 0.75 UNIT mA mA 15 mA 15 2.5 mA 1.5 V 1.4 V isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Triacs TMG3C60F NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our produc...