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IS64WV12816EDBLL Datasheet, Equivalent, STATIC RAM.128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
| Part | IS64WV12816EDBLL |
|---|---|
| Description | 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
| Feature | IS61WV12816EDBLL IS64WV12816EDBLL
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATI C RAM WITH ECC
MAY 2020
FEATURES • High-speed access time: 8, 10 ns • Lo w Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS sta ndby • Single power supply — Vdd 2. 4V to 3. 6V (10 ns) — Vdd 3. 3V ± 10% (8 ns) • Fully static operation: no c lock or refresh required • Three stat e outputs • Data control for upper an d lower bytes • Industrial and Automo tive temperature support • Lead-free available • Error Detection and Error Correction FUNCTIONAL BLOCK DIAGRAM D ESCRIPTION The ISSI IS61/64WV12816EDBLL . |
| Manufacture | ISSI |
| Datasheet |
| Part | IS64WV12816EDBLL |
|---|---|
| Description | 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
| Feature | IS61WV12816EDBLL IS64WV12816EDBLL
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATI C RAM WITH ECC
MAY 2020
FEATURES • High-speed access time: 8, 10 ns • Lo w Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS sta ndby • Single power supply — Vdd 2. 4V to 3. 6V (10 ns) — Vdd 3. 3V ± 10% (8 ns) • Fully static operation: no c lock or refresh required • Three stat e outputs • Data control for upper an d lower bytes • Industrial and Automo tive temperature support • Lead-free available • Error Detection and Error Correction FUNCTIONAL BLOCK DIAGRAM D ESCRIPTION The ISSI IS61/64WV12816EDBLL . |
| Manufacture | ISSI |
| Datasheet |
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