| Feature |
IS61WV12816EDBLL IS64WV12816EDBLL
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
MAY 2020
FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical)
CMOS standby • Single power supply
— Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Automotive temperature support • Lead-free available • Error Detection and Error Correction
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION The ISSI IS61/64WV12816EDBLL. |
