IS25LE512M

IS25LE512M IS25WE512M 512Mb SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC 512Mb SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON CHIP ECC IS25LE512M IS25WE512M FEATURES Industry Standard Serial Interface - IS25LE512M: 512Mbit/64Mbyte - IS25WE512M: 512Mbit/64Mbyte - 3 or 4 Byte Addressing Mode - Supports Standard SPI, Fast, Dual, Dual I/O, Quad, Quad I/O, SPI DTR, Dual I/O DTR, Quad I/O DTR, and QPI - Software & Hardware Reset - Supports Serial Flash Discoverable Parameters (SFDP) High Performance Serial Flash (SPI) - 50MHz Normal Read - Up to133Mhz Fast Read: 133MHz (max) for 3.0V, 112MHz (max) for 1.8V - Up to 66MHz DTR (Dual Transfer Rate) - Equivalent Throughput of 532 Mb/s - Selectable Dummy Cycles - Configurable Drive Strength - Supports SPI Modes 0 and 3 - More than 100,000 Erase/Program Cycles - More than 100-year Data Retention - 1-bit ERROR Detection and Correction per 64-bit boundary (with ECC) Flexible & Efficient Memory Architecture - Chip Erase with Uniform Sector/Block Erase (4/32/64KB or 4/32/256 KB)(2) - Program 1 to 256 or 512 Byte per Page(2) - Program/Erase Suspend & Resume Efficient Read and Program modes - Low Instruction Overhead Operations - Continuous Read 8/16/32/64 Byte Burst Wrap - Selectable Burst Length - QPI for Reduced Instruction Overhead - Data Learning Pattern for training in DTR operation Low Power with Wide Temp. Ranges - Single Voltage Supply IS25LE...