N-Channel MOSFET
BS170F
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Features and Benefits
VDS = 60V RDS(ON) = 5 For automot...
Description
BS170F
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Features and Benefits
VDS = 60V RDS(ON) = 5 For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Drain-Source Voltage
Continuous Drain Current at TA = +25°C Pulsed Drain Current Gate Source Voltage
Power Dissipation at TA = +25°C Operating and Storage Temperature Range
Symbol VDS ID IDM VGS
PTOT TJ, TSTG
Value 60 0.15 3 20 330
-55 to +150
Unit V mA A V
mW °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current
Static Drain-Source On-State Resistance Forward Transconductance (Note 1) (Note 2)
Symbol Min
Typ
Max
BVDSS
60
90
—
VGS(TH)
0.8
—
3
IGSS
—
—
10
IDSS
—
—
0.5
RDS(ON)
—
—
5
gfs
—
200
—
Input Capacitance (Note 2)
Ciss
—
60
—
Turn-On Delay Time (Note 2) (Note 3) Turn-Off Delay Time (Note 2) (Note 3)
tD(ON)
—
—
10
tD(OFF)
—
—
10
Notes:
1. Measured under pulsed conditions. Width = 300s. Duty cycle 2%. 2. Sample test. 3. Switching times measured with 50source impedance and <5ns rise time on a pulse generator.
Spice parameter dat...
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