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NOIS1SM0250A

ON Semiconductor

CMOS Image Sensor

NOIS1SM0250A STAR250 250K Pixel Radiation Tolerant CMOS Image Sensor Features • 512 x 512 Active Pixels • 25 mm Pixel ...


ON Semiconductor

NOIS1SM0250A

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Description
NOIS1SM0250A STAR250 250K Pixel Radiation Tolerant CMOS Image Sensor Features 512 x 512 Active Pixels 25 mm Pixel Size 1 inch Optical Format Up to 30 Frames per Second (fps) at Full Resolution 8 MHz Maximum Data Rate/Master Clock 3340 V.m2/W.s Sensitivity 74 dB (5000:1) Dynamic Range 76 e- kTC Noise 4750 e-/s at RT Dark Current 5 V Supply Voltage Operating Temperature Range ♦ –40°C to +85°C Gamma Total Dose Radiation Tolerance: ♦ Increase in Average Dark Current < 1 nA/cm2 after 3 MRad ♦ Image Operation with Dark Signal < 1 V/s after 10 Mrad Demonstrated (Co60) Proton Radiation Tolerance: ♦ 1% of Pixels has an Increase in Dark Current > 1 nA/cm2 after 3*10E10 Protons at 11.7 MeV SEL Threshold > 80 MeV cm3 mg-1 Less than 350 mW Power Consumption These Devices are Pb−Free and are RoHS Compliant www.onsemi.com Figure 1. STAR250 Photograph JLDCC84 CASE 114AK Applications Applications Requiring Higher Pixel Pitch Scientific Applications Requiring Radiation Tolerance Nuclear Inspection Overview The STAR250 sensor is a CMOS active pixel sensor featuring 512 x 512 pixels on a 25 mm pitch, on chip fixed pattern noise (FPN) correction, a programmable gain amplifier, and a 10-bit ADC. Flexible operating (multiple windowing, sub-sampling) is possible by direct addressable X and Y registers. The sensor has an outstanding radiation tolerance that is observed using proprietary technology modifications and design techniques. The STAR250 utilizes a B...




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