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2SK659 Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part | 2SK659 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK659
FEATURES ·Drain Current : ID= 12A@ TC =25℃ ·Drain Source Voltage
: VDSS= 6 0V(Min) ·Static Drain-Source On-Resist ance
: RDS(on) = 75mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-t o-Lot variations for robust device
perf ormance and reliable operation
DESCRIP TION ·motor drive, DC-DC converter, po wer switch
and solenoid drive. ABSOLUT E MAXIMUM RATINGS(Ta=25℃) SYMBOL PA RAMETER VALUE UNIT VDSS Drain-Sourc e Voltage 60 V VGS Gate-Source Volt age-Continuous ±20 V ID Drain Curr ent-Continuous 12 A IDM Drain Curre nt-Single Pluse 60 A PD . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SK659 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK659
FEATURES ·Drain Current : ID= 12A@ TC =25℃ ·Drain Source Voltage
: VDSS= 6 0V(Min) ·Static Drain-Source On-Resist ance
: RDS(on) = 75mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-t o-Lot variations for robust device
perf ormance and reliable operation
DESCRIP TION ·motor drive, DC-DC converter, po wer switch
and solenoid drive. ABSOLUT E MAXIMUM RATINGS(Ta=25℃) SYMBOL PA RAMETER VALUE UNIT VDSS Drain-Sourc e Voltage 60 V VGS Gate-Source Volt age-Continuous ±20 V ID Drain Curr ent-Continuous 12 A IDM Drain Curre nt-Single Pluse 60 A PD . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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