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2SK3674-01S Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part | 2SK3674-01S |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3674 -01S
FEATURES ·Drain Current : ID= 7. 0A@ TC=25℃ ·Drain Source Voltage : V DSS= 900V(Min) ·Static Drain-Source On -Resistance : RDS(on) = 2. 0Ω(Max) @ VG S= 10V ·100% avalanche tested ·Minimu m Lot-to-Lot variations for robust devi ce performance and reliable operation DESCRIPTION ·motor drive, DC-DC conver ter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM BOL PARAMETER VALUE UNIT VDSS Drai n-Source Voltage 900 V VGS Gate-Sou rce Voltage-Continuous ±30 V ID Dr ain Current-Continuous 7. 0 A IDM Dr ain Current-Single Pluse . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SK3674-01S |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3674 -01S
FEATURES ·Drain Current : ID= 7. 0A@ TC=25℃ ·Drain Source Voltage : V DSS= 900V(Min) ·Static Drain-Source On -Resistance : RDS(on) = 2. 0Ω(Max) @ VG S= 10V ·100% avalanche tested ·Minimu m Lot-to-Lot variations for robust devi ce performance and reliable operation DESCRIPTION ·motor drive, DC-DC conver ter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM BOL PARAMETER VALUE UNIT VDSS Drai n-Source Voltage 900 V VGS Gate-Sou rce Voltage-Continuous ±30 V ID Dr ain Current-Continuous 7. 0 A IDM Dr ain Current-Single Pluse . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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