2SK3676-01S | Inchange Semiconductor
N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor
2SK3676-01S
FEATURES ·Drain Current .
N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor
2SK3676-01S
FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 2.5Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM R.
- 2SK3676-01S | Inchange Semiconductor
- N-Channel MOSFET Transistor
- isc N-Channel MOSFET Transistor
2SK3676-01S
FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Sour.
- isc N-Channel MOSFET Transistor
2SK3676-01S
FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 2.5Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VD.
- 2SK3676-01S | Fuji Electric
- N-CHANNEL SILICON POWER MOSFET
- 2SK3676-01L,S,SJ
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Sup.
- 2SK3676-01L,S,SJ
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
P4
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain.
- 2SK3676-01SJ | Inchange Semiconductor
- N-Channel MOSFET Transistor
- isc N-Channel MOSFET Transistor
2SK3676-01SJ
FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Sou.
- isc N-Channel MOSFET Transistor
2SK3676-01SJ
FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 2.5Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V.
- 2SK3676-01SJ | Fuji Electric
- N-CHANNEL SILICON POWER MOSFET
- 2SK3676-01L,S,SJ
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Sup.
- 2SK3676-01L,S,SJ
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
P4
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain.
