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IS42S32160F Datasheet, Equivalent, 512Mb SDRAM.512Mb SDRAM 512Mb SDRAM |
| Part | IS42S32160F |
|---|---|
| Description | 512Mb SDRAM |
| Feature | IS42R32160F, IS45R32160F IS42S32160F, IS 45S32160F
16Mx32, 512Mb SDRAM
NOVEMBE R 2015
FEATURES
• Clock frequency: 1 66, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row a ccess/precharge • Power supply: Vdd/V ddq = 2. 3V-3. 6V IS42/45S32160F - Vdd/Vd dq = 3. 3V IS42/45R32160F - Vdd/Vddq = 2 . 5 • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full pag e) • Programmable burst sequence: Seq uential/Interleave • Auto Refresh (CB R) • Self Refresh • 8K refresh cycl es every 64 ms • Random column addres s every clock cycle • Programmable CA S . |
| Manufacture | ISSI |
| Datasheet |
| Part | IS42S32160F |
|---|---|
| Description | 512Mb SDRAM |
| Feature | IS42R32160F, IS45R32160F IS42S32160F, IS 45S32160F
16Mx32, 512Mb SDRAM
NOVEMBE R 2015
FEATURES
• Clock frequency: 1 66, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row a ccess/precharge • Power supply: Vdd/V ddq = 2. 3V-3. 6V IS42/45S32160F - Vdd/Vd dq = 3. 3V IS42/45R32160F - Vdd/Vddq = 2 . 5 • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full pag e) • Programmable burst sequence: Seq uential/Interleave • Auto Refresh (CB R) • Self Refresh • 8K refresh cycl es every 64 ms • Random column addres s every clock cycle • Programmable CA S . |
| Manufacture | ISSI |
| Datasheet |
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