FDI038AN06A0

FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench® MOSFET 60 V, 80 A, 3.8 mΩ Features Applications RDS(on) = 3.5 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A QG(tot) = 96 nC ( Typ.) @ VGS = 10 V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82584 Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor drives and Uninterruptible Power Supplies D GDS TO-220 GDS I2-PAK MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 151oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. (Note 2) G S FDP038AN06A0 FDI038AN06A0 60 ±20 80 17 Figure 4 625 310 2.07 -55 to 175 Unit V V A A A mJ W W/oC oC 0.48 62 oC/W oC/W ©2002 Semiconductor Components Industries, LLC. September-2017,Rev. 3 Publication Order Number: FDP038AN06A0/D FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Device Marking FDP038AN06A0 FDI038AN06A0 Device FDP038AN06A0 FDI038AN06A0 Package TO-220 I2-PAK ...