IXTT1N300P3HV

High Voltage Power MOSFET Preliminary Technical Information IXTT1N300P3HV IXTH1N300P3HV VDSS I D25 RDS(on) = 3000V = 1.00A  50 N-Channel Enhancement Mode TO-268HV (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 ID110 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 110C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268HV TO-247HV Maximum Ratings 3000 V 3000 V 20 V 30 V 1.00 A 0.65 A 2.60 A 195 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13/10 Nm/lb.in 4.0 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = 0.8 VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5A, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 3000 V 2.0 4.0 V 100 nA 25 A 250  A 50  G S D (Tab) TO-247HV (IXTH) G S D D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  High Blocking Voltage  High Voltage Packages Advantages  Easy to Mount  Space Savings  High Power Density Applications  High Voltage Power Supplies  Capacitor Discharge Applications  Pulse Circuits  Laser and X-Ray Generation Systems © 2014 IXYS CORPORATION, All Rights Reserved DS100590A(6/14) Symbol Test Conditions (T...