IXTH1N450HV

High Voltage Power MOSFET IXTT1N450HV IXTH1N450HV VDSS I D25 RDS(on) = 4500V = 1A  80 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 4500 V 4500 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM 1 A 3 A TC = 25C 520 W - 55 ... +150 C 150 C - 55 ... +150 C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force (TO-263HV) Mounting Torque (TO-247HV) 10..65 / 22..14.6 1.13/10 N/lb Nm/lb.in TO-263HV TO-247HV 2.5 g 6.0 g TO-268HV (IXTT) G S D (Tab) TO-247HV (IXTH) G S D D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  High Blocking Voltage  High Voltage Package Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV TJ = 100C RDS(on) VGS = 10V, ID = 50mA, Note 1 Characteristic Values Min. Typ. Max. 3.5 6.0 V 100 nA 5 A 25 μA 15 μA 80  Advantages  Easy to Mount  Space Savings  High Power Density Applications  High Voltage Power Supplies  Capacitor Discharge Applications  Pulse Circuits  Laser and X-Ray Generation Systems © 2014 IXYS CORPORATION, All Rights Reserved DS100500D(04/14) Symbol Test Conditions (TJ = 25C, Unless Otherwise...