RSJ250P10

isc P-Channel MOSFET Transistor RSJ250P10 ·FEATURES ·Drain Current –ID= -25A@ TC=25℃ ·Drain Source Voltage : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 63mΩ(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -25 A IDM Drain Current-Single Pulsed -50 A PD Total Dissipation @TC=25℃ 50 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 2.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = -1mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Source Leakage Current VDS= VGS; ID = -1mA VGS= -10V; ID= -25A VGS= -4.0V; ID= -12.5A VGS= ±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS= -100V; VGS= 0V VSD Diode forward voltage Is= -25A; VGS = 0V RSJ250P10 MIN MAX UNIT -100 V -1.0 -2.5 V 63 70 mΩ ±10 uA -1.0 μA -1.2 V NOTICE： ISC ...