isc P-Channel MOSFET Transistor
STP80PF55
FEATURES ·Drain Current : ID= -80A@ TC=25℃ ·Drain Source Voltage
: VDSS= -55...
isc P-Channel MOSFET
Transistor
STP80PF55
FEATURES ·Drain Current : ID= -80A@ TC=25℃ ·Drain Source Voltage
: VDSS= -55V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 18mΩ(Max) @ VGS= -10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-55
V
VGS
Gate-Source Voltage-Continuous
±16
V
ID
Drain Current-Continuous
-80
A
IDM
Drain Current-Single Pluse
-320
A
PD
Total Dissipation @TC=25℃
300
W
TJ
Max. Operating Junction Temperature -55~175
℃
Tstg
Storage Temperature
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.5
UNIT ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc P-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
CONDITIONS VGS= 0; ID= -0.25mA VDS= -10V; ID= -0.25mA VGS= -10V; ID= -40A VGS= ±16V;VDS= 0 VDS= -55V; VGS= 0 IS= -40A; VGS= 0
STP80PF55
MIN MAX UNIT
-55
--
V
-2.0
-4.0
V
--
18
mΩ
--
±0.1
uA
--
-1.0
uA
--
-1.3
V
NOTICE: ISC reserves the rights...