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SW058R72E7T

Samwin

N-channel MOSFET

SW058R72E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220  High ruggedness  Low RDS(ON) (Typ 6.3mΩ)@VGS=1...


Samwin

SW058R72E7T

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Description
SW058R72E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220  High ruggedness  Low RDS(ON) (Typ 6.3mΩ)@VGS=10V  Low Gate Charge (Typ 107nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Synchronous Rectification, Li Battery Protect Board, Inverter 12 3 General Description 1. Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 72V ID : 100A RDS(ON) : 6.3mΩ 2 1 3 Item Sales Type Marking Package Packaging 1 SW P 058R72E7T SW058R72E7T TO-220 TUBE Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy Peak diode recovery dv/dt (note 1) (note 2) (note 1) (note 3) Total power dissipation (@TC=25oC) PD Derating factor above 25oC TSTG, TJ Operating junction temperature & storage temperature Maximum lead temperature for soldering TL purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Value 72 100* 80* 400 ±20 240 24 5 223.2 1.8 -55 ~ + 150 300 Unit V A A A V mJ mJ V/ns W W/oC oC oC Symbol Parame...




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