SW065R68E7T

SW065R68E7T N-channel Enhanced mode TO-252 MOSFET Features TO-252  High ruggedness  Low RDS(ON) (Typ 6.3mΩ)@VGS=10V  Low Gate Charge (Typ 75nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Synchronous Rectification, Li Battery Protect Board, Inverter 12 3 1. Gate 2.Drain 3.Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking 1 SW D 065R68E7T SW065R68E7T Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy Peak diode recovery dv/dt (note 1) (note 2) (note 1) (note 3) Total power dissipation (@TC=25oC) PD Derating factor above 25oC TSTG, TJ Operating junction temperature & storage temperature *. Drain current is limited by junction temperature. Thermal characteristics BVDSS : 68V ID : 90A RDS(ON) : 6.3mΩ 2 1 3 Package TO-252 Value 68 90* 59* 360 ± 20 225 20 5 123.8 0.99 -55 ~ + 150 Packaging REEL Unit V A A A V mJ mJ V/ns W W/oC oC Symbol Parameter Value Unit Rthjc Thermal resistance, Junction to case 1.01 oC/W Copyright@ SEMIPOWER Electronic ...