SW70N10V

SW70N10V N-channel Enhanced mode TO-251/TO-252/TO-220 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 12.4mΩ)@VGS=4.5V Low RDS(ON) (Typ 11.7mΩ)@VGS=10V  Low Gate Charge (Typ 117nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Synchronous Rectification, Li Battery Protect Board, Inverter TO-251 TO-252 TO-220 1 2 3 1 2 3 1 23 1. Gate 2. Drain 3. Source BVDSS : 95V ID : 70A RDS(ON) : 12.4mΩ @VGS=4.5V 11.7mΩ @VGS=10V 2 General Description 1 This power MOSFET is produced with advanced technology of SAMWIN. 3 This technology enable the power MOSFET to have better characteristics, including Fast switching time, low on resistance, low gate charge and especially excellent Avalanche characteristics. Order Codes Item Sales Type 1 SW I 70N10V 2 SW D 70N10V 3 SW P 70N10V Marking SW70N10V SW70N10V SW70N10V Package TO-251 TO-252 TO-220 Packaging TUBE REEL TUBE Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed (note 1) Gate to source voltage Single pulsed avalanche energy (note 2) Repetitive avalanche energy (note 1) Peak diode recovery dv/dt (note 3) Total power dissipation (@TC=25oC) Derating factor above 25oC Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. Value TO-251 TO-252 TO-...