SW13N65D

SW13N65D Features N-channel Enhanced mode TO-220F MOSFET  High ruggedness  Low RDS(ON) (Typ 0.6Ω)@VGS=10V  Low Gate Charge (Typ 54nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: LED, Charger, PC Power TO-220F 1 23 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 650V ID : 13A RDS(ON) : 0.6Ω 2 1 3 Order Codes Item Sales Type Marking Package Packaging 1 SW F 13N65D SW13N65D TO-220F TUBE Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy Peak diode recovery dv/dt (note 1) (note 2) (note 1) (note 3) Total power dissipation (@TC=25oC) PD Derating factor above 25oC TSTG, TJ TL Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Value 650 13* 8.2* 52 ±30 484 45 5 28.4 0.23 -55 ~ + 150 300 Unit V A A A V mJ mJ V/ns W W/oC oC oC Symbol Parameter Value Unit Rthjc Thermal resistance, Junction t...