SW4N70L

SW4N70L N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 0.8Ω)@VGS=10V  Low Gate Charge (Typ 18nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: LED,Charge, Adaptor TO-220F TO-251N TO-252 1 23 1 23 1 23 BVDSS : 700V ID : 4A RDS(ON) : 0.8Ω 2 1 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced super junction technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type 1 SW F 4N70L 2 SW N 4N70L 3 SW D 4N70L Marking SW4N70L SW4N70L SW4N70L Package TO-220F TO-251N TO-252 Absolute maximum ratings 3 Packaging TUBE TUBE REEL Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy MOSFET dv/dt ruggedness (@VDS=0~400V) (note 1) (note 2) (note 1) dv/dt Peak diode recovery dv/dt (note 3) Total power dissipation (@TC=25oC) PD Derating factor above 25oC TSTG, TJ TL Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics ...