N-channel MOSFET
SW88N60K2
N-channel Enhanced mode TO-247 MOSFET
Features
TO-247
⚫ High ruggedness
⚫ Low RDS(ON) (Typ 24mΩ)@VGS=10V ...
Description
SW88N60K2
N-channel Enhanced mode TO-247 MOSFET
Features
TO-247
⚫ High ruggedness
⚫ Low RDS(ON) (Typ 24mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 188nC)
⚫ Improved dv/dt Capability
⚫ 100% Avalanche Tested ⚫ Application: Solar/PV inverter、Servicer、
Telecom、PC power、UPS、EV-charger
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General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BVDSS : 600V
ID
: 88A
RDS(ON) : 24mΩ
2
1
3
Item
Sales Type
Marking
Package
Packaging
1
SW T 88N60K2
SW88N60K2
TO-247
TUBE
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM VGS EAS EAR dv/dt
Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy MOSFET dv/dt ruggedness (@VDS=0~400V)
(note 1)
(note 2) (note 1)
dv/dt Peak diode recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC) PD
Derating factor above 25oC
TSTG, TJ Operating junction temperature & storage temperature
Maximum lead temperature for soldering
TL
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Value 600 88* 55.5 264 ± 30 2421 131 30 20 416.7 3.3 -55 ~ + ...
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