SW055R68E7T

SW055R68E7T Features N-channel Enhanced mode TO-220/TO-263 MOSFET  High ruggedness  Low RDS(ON) (Typ 5.6mΩ)@VGS=10V  Low Gate Charge (Typ 94nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Synchronous Rectification, Li Battery Protect Board, Inverter TO-220 TO-263 12 3 12 3 General Description 1. Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 68V ID : 110A RDS(ON) : 5.6mΩ 2 1 3 Order Codes Item Sales Type Marking Package Packaging 1 SW P 055R68E7T 2 SW B 055R68E7T SW055R68E7T SW055R68E7T TO-220 TO-263 TUBE TUBE Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy Peak diode recovery dv/dt (note 1) (note 2) (note 1) (note 3) Total power dissipation (@TC=25oC) PD Derating factor above 25oC TSTG, TJ TL Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Rthjc Thermal resistance, Junction to case ...